AON6926 Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel MOSFET

AON6926
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6926 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is desgined to minimze switching
losses. The Q2 "Low Side" MOSFET is an SRFET™ that
features low R_DS(ON) to reduce conduction losses as well as
an integrated Schottky diode with low Q_RR and V_f to reduce
switching losses. The AON6926 is well suited for use in
compact DC/DC converter applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
44A
<11mΩ
<14mΩ
Q2
30V
50A
<8.5mΩ
<12mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
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Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
44
50
28
32
Pulsed Drain Current ^C
I_DM
100
140
Continuous Drain
Current
T_A=25°C
T_A=70°C
11
I_DSM
9
12
10
Avalanche Current ^C
I_AS, I_AR
27
15
Avalanche Energy L=0.1mH ^C
E_AS, E_AR
36
11
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
31
12.5
35
14
T_A=25°C
Power Dissipation ^A T_A=70°C
1.9
2.1
P_DSM
1.2
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
29
56
3.4
Typ Q2
24
50
3
Max Q1
35
67
4
Max Q2
29
60
3.6
Units
°C/W
°C/W
°C/W
Rev0 : July 2010
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