AON6924 Datasheet, PDF (1/11 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel MOSFET

AON6924
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6924 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1 “
High Side” MOSFET and the Q2 “Low Side” MOSFET with
integrated Schottky have been designed for optimal power
efficiency.The AON6924 is well suited for use in compact
DC/DC converter applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
60A
<5.2mΩ
<7.8mΩ
Q2
30V
85A
<1.6mΩ
<1.9mΩ
Top View
DFN5X6A
Bottom View
G2
S2
S2
S2
(S1/D2)
PIN1
D1
D1 ^G1
D1
D1
PHASE
Top View
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche Energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Max Q1
Max Q2
30
±20
±12
60
85
38
66
200
510
15
28
12
22
40
68
80
231
31
104
12.5
41.5
2
2.2
1.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
25
50
3.1
Typ Q2
20
45
0.9
Max Q1
30
60
4
Max Q2
25
55
1.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: April 2011
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