AON6922 Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 25V Dual Asymmetric N-Channel MOSFET

AON6922
25V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6922 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
R_DS(ON) to reduce conduction losses. The AON6922 is
well suited for use in compact DC/DC converter
applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
25V
71A
<3.8mΩ
<4.8mΩ
Q2
25V
85A
<1.4mΩ
<1.8mΩ
Top View
DFN5X6A
Bottom View
G2
S2
S2
S2
(S1/D2)
D1
D1 ^G1
D1
D1
Top View
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
V_DS
25
Gate-Source Voltage
V_GS
±12
Continuous Drain ^TC^=25°C
Current ^G
T_C=100°C
Pulsed Drain Current ^C
71
85
I_D
44
66
I_DM
240
420
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche Energy L=0.1mH ^C
18
31
I_DSM
14
25
I_AS, I_AR
40
78
E_AS, E_AR
80
304
T_C=25°C
Power Dissipation ^B T_C=100°C
31
104
P_D
12.5
41.5
T_A=25°C
Power Dissipation ^A T_A=70°C
2
2.2
P_DSM
1.3
1.4
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
25
50
3.1
Typ Q2
20
45
0.9
Max Q1
30
60
4
Max Q2
25
55
1.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: April 2011
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