AON6918 Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 25V Dual Asymmetric N-Channel MOSFET

AON6918
25V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6918 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
R_DS(ON) to reduce conduction losses. The AON6918 is well
suited for use in compact DC/DC converter applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
25V
60A
<5.2mΩ
<7.8mΩ
Q2
25V
85A
<1.8mΩ
<2.7mΩ
Top View
DFN5X6A
Bottom View
G2
S2
S2
S2
(S1/D2)
PIN1
D1
D1 ^G1
D1
D1
Top View
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche Energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Max Q1
Max Q2
25
±20
60
85
38
66
200
490
15
26.5
12
21
40
78
80
304
31
104
12.5
41.5
2
2.2
1.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
25
50
3.1
Typ Q2
20
45
0.9
Max Q1
30
60
4
Max Q2
25
55
1.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0 : Aug 2011
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