AON6912A Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel MOSFET

AON6912A
30V Dual Asymmetric N-Channel MOSFET
General Description
The AON6912A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
R_DS(ON) to reduce conduction losses. The AON6912A is
well suited for use in compact DC/DC converter
applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
34A
<13.7mΩ
<19.3mΩ
Q2
30V
52A
<7.3mΩ
<10.4mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche Energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Max Q1
Max Q2
30
±20
34
52
21
33
85
130
10
13.8
8
10.8
22
28
24
80
22
30
9
12
1.9
2.1
1.2
1.3
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
29
56
4.5
Typ Q2
24
50
3.5
Max Q1
35
67
5.5
Max Q2
29
60
4.2
Units
°C/W
°C/W
°C/W
Rev1: Mar. 2011
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