AON6910A Datasheet, PDF (1/11 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel MOSFET

AON6910A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6910A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and board
space utilization.It includes two specialized MOSFETs in a dual
Power DFN5x6B package. The Q1 "High Side" MOSFET is
desgined to minimze switching losses. The Q2 "Low Side"
MOSFET is desgined for low R_DS(ON) to reduce conduction
losses.Power losses are minimized due to an extremely low
combination of R_DS(ON) and Crss.In addition,switching behavior
is well controlled with a "Schottky style" soft recovery body
diode.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
37A
<14mΩ
<20mΩ
Q2
30V
80A
<4.1mΩ
<5.0mΩ
Top View
DFN5X6B
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
±12
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
37
80
23
52
Pulsed Drain Current ^C
I_DM
85
190
Continuous Drain
Current
T_A=25°C
T_A=70°C
9.1
I_DSM
7.2
16
13
Avalanche Current ^C
I_AS, I_AR
21
35
Avalanche Energy L=0.1mH ^C
E_AS, E_AR
22
61
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
31
12.5
52
20
T_A=25°C
Power Dissipation ^A T_A=70°C
1.9
2
P_DSM
1.2
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
29
56
3.3
Typ Q2
27
51
2
Max Q1
35
67
4
Max Q2
32
61
2.4
Units
°C/W
°C/W
°C/W
Rev 0: Jan 2011
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