AON6884 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 40V Dual N-Channel MOSFET

AON6884
40V Dual N-Channel MOSFET
General Description
Product Summary
The AON6884 uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge. This is an
all purpose device that is suitable for use in a wide range
of power conversion applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
40V
34A
< 11.3mΩ
< 13.8mΩ
DFN5X6 EP2
Top View
S1 ¹
G1 ²
S2 ³
G2 ⁴
8 _D1
7 D1
6 D2
5 D2
G1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
40
±20
34
21
120
9
7
35
61
21
8
1.6
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
35
65
Maximum Junction-to-Case
Steady-State
R_θJC
5
Max
45
80
6
D1
D2
G2
S1
S2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: November 2010
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