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AON6850 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 100V Dual N-Channel MOSFET
AON6850
100V Dual N-Channel MOSFET
SDMOS TM
General Description
The AON6850 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
100V
28A
< 35mΩ
< 42mΩ
DFN5X6 EP2
Top View
D1
D2
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2 G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
28
18
55
5
4
28
39
56
22
1.7
1.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
20
60
Maximum Junction-to-Case
Steady-State
RθJC
1.8
Max
24
72
2.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Feb 2010
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