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| AON6816 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V Dual N-Channel AlphaMOS | |||
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AON6816
30V Dual N-Channel AlphaMOS
General Description
⢠Latest Trench Power AlphaMOS (αMOS LV) technology
⢠Very Low RDS(on) at 4.5VGS
⢠Low Gate Charge
⢠ESD protection
⢠RoHS and Halogen-Free Compliant
Application
⢠DC/DC Converters
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
Typical ESD protection
100% UIS Tested
100% Rg Tested
30V
16A
< 6.1mâ¦
< 9.5mâ¦
HBM Class 2
DFN5X6 EP2
Top View
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
G1
5 D2
D1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.05mH C
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
16
13
64
17
14
35
31
36
21
8
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ⤠10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
35
65
Maximum Junction-to-Case
Steady-State
RθJC
5
Max
45
80
6
D2
S2
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: Mar 2012
www.aosmd.com
Page 1 of 6
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