AON6718L Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON6718L
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
Features
SRFET^TM AON6718L uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
V_DS (V) = 30V
I_D = 80A
R_DS(ON) < 3.7mΩ
R_DS(ON) < 5mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R _g Tested!
Fits SOIC8
footprint !
DFN5X6
Top View
S
D
S
D
S
D
G
D
G
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
80
63
210
19
15
40
80
83
33
2.5
1.6
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
14.2
42
1.2
Max
17
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com