AON6716 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON6716
30V N-Channel MOSFET
SRFET ^TM
General Description
SRFET^TM AON6716 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
85A
< 2.8mΩ
< 4.2mΩ
100% UIS Tested
100% R_g Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
G
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
85
67
310
23
18
59
174
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
14
40
Maximum Junction-to-Case
Steady-State
R_θJC
1
Max
17
55
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: November 2010
www.aosmd.com
Page 1 of 7