AON6712 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON6712
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
Features
The AON6712 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AON6712 is Pb-free (meets ROHS & Sony 259
specifications).
V_DS (V) = 30V
I_D = 20A (V_GS = 10V)
R_DS(ON) < 5.5mΩ (V_GS = 10V)
R_DS(ON) < 6.5mΩ (V_GS = 4.5V)
Fits SOIC8
footprint !
DFN5X6
Top View
S
D
S
D
G
S
D
G
D
D
SRFET ^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^B,J
T_C=100°C
I_D
Pulsed Drain Current
I_DM
Continuous Drain T_A=25°C
Current ^H
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
30
30
80
16
13
42
264
62.5
25
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
14.2
42
20
50
Maximum Junction-to-Case ^C
Steady-State
R_θJC
1.2
2.0
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com