AON6710 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON6710
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
Features
SRFET^TM The AON6710/L uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON) and low gate
charge.This device is suitable for use as a low side
FET in SMPS, load switchng and general purpose
applications. AON6710 and AON6710L are electrically
identical.
-RoHS Compliant
-AON6710L is Halogen Free
V_DS (V) = 30V
I_D = 20A (V_GS = 10V)
R_DS(ON) < 4.7mΩ (V_GS = 10V)
R_DS(ON) < 6.7mΩ (V_GS = 4.5V)
Fits SOIC8
footprint !
DFN5X6
Top View
S
D
S
D
S
D
G
G
D
D
SRFET ^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^BJ
T_C=100°C
I_D
Pulsed Drain Current
I_DM
Continuous Drain T_A=25°C
Current ^H
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
30
30
100
19
15
30
135
62
25
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
14.2
42
20
50
Maximum Junction-to-Case ^C
Steady-State
R_θJC
1.2
2.0
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com