AON6706 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON6706
30V N-Channel MOSFET
SRFET ^TM
General Description
Product Summary
SRFET^TM AON6706 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
85A
< 4.6mΩ
< 7mΩ
100% UIS Tested
100% R_g Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
G
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
30
±20
85
64
215
18
14
43
92
83
33
2.3
1.4
-55 to 150
Typ
Max
14
17
40
55
1
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2: November 2010
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