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AON6530 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS | |||
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AON6530
30V N-Channel AlphaMOS
General Description
⢠Latest Trench Power AlphaMOS (αMOS LV) technology
⢠Very Low RDS(on) at 4.5VGS
⢠Low Gate Charge
⢠High Current Capability
⢠RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
Application
⢠DC/DC Converters in Computing, Servers, and POL
⢠Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
30V
72A
< 4.5mâ¦
< 7.8mâ¦
Top View
DFN5X6
Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.05mH C
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
72
45
178
28.5
23
34
29
36
35.5
14
5.6
3.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ⤠10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
18
40
2.75
Max
22
55
3.5
D
S
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: Oct 2012
www.aosmd.com
Page 1 of 6
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