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AON6454A Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 150V N-Channel MOSFET
AON6454A
150V N-Channel MOSFET
General Description
The AON6454A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=7V)
100% UIS Tested
100% Rg Tested
150V
31A
< 38mΩ
< 44mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
150
±20
31
20
65
5
4.0
12
7
83
33
2.3
1.5
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
14
40
Maximum Junction-to-Case
Steady-State
RθJC
1
Max
17
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: April 2011
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