AON6408 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON6408
30V N-Channel MOSFET
General Description
The AON6408 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is for PWM
applications.
Product Summary
V_DS (V) = 30V
I_D = 25A
R_DS(ON) < 6.5mΩ
R_DS(ON) < 9.5mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
Top View
PIN1
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
25
20
130
14.5
11.5
32
51
31
12.5
2.4
1.5
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
17
44
Max
21
53
Maximum Junction-to-Case
Steady-State
R_θJC
3.4
4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com