AON6405L Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AON6405L
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6405L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON).This device is ideal for load
switch and battery protection applications.
-RoHS Compliant
-Halogen Free
Features
V_DS (V) = -30V
I_D = -30A
(V_GS = -10V)
R_DS(ON) < 7mΩ (V_GS = -10V)
R_DS(ON) < 8mΩ (V_GS = -4.5V)
ESD Protected!
100% UIS Tested!
Fits SOIC8
footprint !
DFN5X6
Top View
S
D
S
D
Rg
S
DG
G
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-30
-23
-160
-15
-12
-54
146
83
33
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^AD
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
14.2
42
1.2
Max
17
50
1.5
Alpha & Omega Semiconductor, Ltd.
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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