AON6405 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AON6405
30V P-Channel MOSFET
General Description
Product Summary
The AON6405 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS= -10V)
R_DS(ON) (at V_GS= -10V)
R_DS(ON) (at V_GS = -4.5V)
ESD Protected
100% UIS Tested
-30
-30A
< 7mΩ
< 8mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
Rg
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±20
-30
-23
-160
-15
-12
-54
146
83
33
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
14.2
42
1.2
Max
17
50
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2: Feb. 2012
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