AON6400 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON6400
30V N-Channel MOSFET
General Description
Product Summary
The AON6400 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
30V
85A
< 1.4mΩ
< 1.8mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
1
8
G
2
7
3
6
4
5
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
85
67
400
31
25
90
405
83
33
2.3
1.45
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
14
40
Maximum Junction-to-Case
Steady-State
R_θJC
1
Max
17
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1 : November 2010
www.aosmd.com
Page 1 of 6