AON6246 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AON6246
60V N-Channel MOSFET
General Description
Product Summary
The AON6246 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of R_DS(ON)
and C_rss.In addition,switching behavior is well controlled
with a soft recovery body diode.This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
60V
80A
< 6.4mΩ
< 8mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
60
±20
80
51
170
13
10
50
125
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
14
40
Maximum Junction-to-Case
Steady-State
R_θJC
1.1
Max
17
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: July 2011
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