AON6204 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON6204
30V N-Channel MOSFET
General Description
The AON6204 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
R_DS(ON) and C_rss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
30V
24A
< 12mΩ
< 18mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
24
19
110
14
11
21
22
31
13
1.9
1.2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
29
56
Maximum Junction-to-Case
Steady-State
R_θJC
3.3
Max
35
67
4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1 : March 2011
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