AON5820 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 20V Common-Drain Dual N-Channel MOSFET

AON5820
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AON5820 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
V_GS(MAX) rating It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS=4.5V)
R_DS(ON) (at V_GS=4.0V)
R_DS(ON) (at V_GS=3.5V)
R_DS(ON) (at V_GS=3.1V)
R_DS(ON) (at V_GS=2.5V)
Typical ESD protection
20V
10A
< 9.5mΩ
< 10mΩ
< 10.5mΩ
< 11.5mΩ
< 13mΩ
HBM Class 2
S1
S1
G1
Top View
DFN 2X5
Bottom View
S2
S2
G2
D1/D2
D1
G1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±12
10
8
85
1.7
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
30
61
Maximum Junction-to-Case
Steady-State
R_θJC
4.5
Max
40
75
5.5
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Oct. 2011
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