AON5802B Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON5802B
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
The AON5802B/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation with
gate voltages as low as 2.5V while retaining a 12V V_GS(MAX)
rating. This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration.
AON5802B and AON5802BL are electrically identical.
-RoHs Compliant
-AON5802BL is Halogen Free
V_DS (V) = 30V
I_D = 7.2A (VGS = 4.5V)
R_DS(ON) < 19 mΩ (V_GS = 4.5V)
R_DS(ON) < 20 mΩ (V_GS = 4.0V)
R_DS(ON) < 23 mΩ (V_GS = 3.1V)
R_DS(ON) < 30 mΩ (V_GS = 2.5V)
ESD Protected
DFN 2X5
S1
S1
G1
S2
S2
G2
D1/D2
D1
1
Rg
G1
Rg
G2
Top View
S2
S2
G2
S1
S1
G1
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
Power Dissipation ^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
P_DSM
T_J, T_STG
S1
Maximum
30
±12
7.2
5.6
55
1.6
1.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
30
61
Steady-State
R_θJL
4.5
Max
40
75
6
D2
1
S2
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com