AON4807 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V Dual P-Channel MOSFET

AON4807
30V Dual P-Channel MOSFET
General Description
Product Summary
The AON4807 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS =-4.5V)
-30V
-4A
< 68mΩ
< 105mΩ
DFN 3x2A
Top View
Bottom View
Pin 1
Top View
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
G1
D1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±20
-4
-3
-18
1.9
1.2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
51.5
82
37
Max
65
100
50
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: July 2012
www.aosmd.com
Page 1 of 5