AON4803 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AON4803
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON4803 uses advanced trench technology
to provide excellent R_DS(ON), low gate charge and
operation with gate voltage as low as 1.8V. This
device is suitable for use as a load switch or in
PWM applications. Standard Product AON4803
is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS (V) = -20V
I_D = -3.4A
(V _GS = -4.5V)
R_DS(ON) < 90mΩ (V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -2.5V)
R_DS(ON) < 165mΩ (V_GS = -1.8V)
S1 1 8 D1
G1 ^{2 7} D1
S2 ^{3 6} D2
G2 ^{4 5 D2}
DFN3X2-8L
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
D1
D2
G1
G2
S1
S2
MOSFET
-20
±8
-3.4
-2.7
-15
1.7
1.1
-55 to 150
Typ
Max
51
75
88
110
28
35
Units
V
V
A
W
°C
Units
°C/W
Alpha & Omega Semiconductor, Ltd.