AON4703 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AON4703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AON4703 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AON4703 is Pb-free (meets ROHS &
Sony 259 specifications). AON4703L is a Green Product
ordering option. AON4703 and AON4703L are electrically
identical.
Features
V_DS (V) = -20V
I_D = -3.4A (V_GS = -4.5V)
R_DS(ON) < 90mΩ (V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -2.5V)
R_DS(ON) < 160mΩ (V_GS = -1.8V)
SCHOTTKY
VKA (V) = 20V, I_F = 1A, V_F<0.5V@0.5A
A 18K
A 27K
S ³⁶D
G ⁴⁵D
DFN3X2-8L
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current^B
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current^A
T_A=25°C
T_A=70°C
I_F
Pulsed Forward Current^B
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
G
MOSFET
-20
±8
-3.4
-2.7
-15
1.7
1.1
-55 to 150
Typ
51
88
28
66
95
40
D
K
S
A
Schottky
20
1.9
1.2
7
0.96
0.62
-55 to 150
Max
75
110
35
80
130
50
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.