AON4701 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AON4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AON4701 uses advanced trench technology to provide
excellent R _DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AON4701 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
V_DS (V) = -20V
I_D = -3.4A (V_GS = -4.5V)
R_DS(ON) < 90mΩ (V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -2.5V)
R_DS(ON) < 160mΩ (V_GS = -1.8V)
SCHOTTKY
V_KA (V) = 20V, I_F = 1A, V_F<0.5V@0.5A
DFN3X2-8L
A 18K
A 27K
S ³⁶D
G ⁴⁵D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
T_A=25°C
T_A=70°C
I_F
Pulsed Forward Current ^B
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
MOSFET
-20
±8
-3.4
-2.7
-15
1.7
1.1
-55 to 150
Typ
49
81
37
60
89
40
D
K
S
A
Schottky
20
1.9
1.2
7
0.96
0.62
-55 to 150
Max
75
100
45
75
130
50
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W