AON4604 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AON4604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AON4604 uses advanced trench technology to
provide excellent R _DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4604 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
n-channel
p-channel
V_DS (V) = 20V -20V
I_D = 5.4A
-3.8A
(V_GS= ±4.5V)
R_DS(ON) < 42mΩ
R_DS(ON) < 52mΩ
R_DS(ON) < 72mΩ
< 90mΩ
< 120mΩ
< 170mΩ
(V_GS = ±4.5V)
(V_GS = ±2.5V)
(V_GS = ±1.8V)
D1
D2
DFN3X2-8L
S1 1 8 D1
G1 2 7 D1
S2 3 6 D2
G2 4 5 D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
5.4
I_D
4.3
I_DM
15
Power Dissipation
T_A=25°C
T_A=70°C
1.9
P_D
1.2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Max p-channel
-20
±8
-3.8
-3.0
-15
1.9
1.2
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Symbol
R_θJA
R_θJL
Typ Max
51.5 65
82 100
37
50
Typ Max
51.5 65
82 100
37
50
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com