AON4603 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AON4603
Complementary Enhancement Mode Field Effect Transistor
General Description
The AON4603 uses advanced trench technology to
provide excellent R _DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4603 is Pb-free (meets ROHS
& Sony 259 specifications). AON4603L is a Green
Product ordering option. AON4603 and AON4603L are
electrically identical.
Features
n-channel
p-channel
V_DS (V) = 30V
I_D = 4A
-30V
-3.6A
(V_GS= ±10V)
R_DS(ON) < 75mΩ < 100mΩ (V_GS = ±10V)
R_DS(ON) < 115mΩ < 180mΩ (V_GS = ±4.5V)
D1
D2
DFN2X3
S1 1 8 D1
G1 2 7 D1
S2 ^{3 6} D2
G2 ^{4 5} D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
4
I_D
3.2
I_DM
12
Power Dissipation
T_A=25°C
T_A=70°C
1.9
P_D
1.2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-3.6
-2.9
-12
2.1
1.3
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Symbol
R_θJA
R_θJL
Typ Max
54
65
102 125
58
70
Typ Max
50
60
85 110
41
50
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.