AON4421 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

General Description
The AON4421 uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge. This
device is suitable for use as a load switch.
AON4421
P-Channel Enhancement Mode
Field Effect Transistor
Product Summary
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS=-4.5V)
-30V
-8A
< 26mΩ
< 34mΩ
-RoHS Compliant
-Halogen Free
Top View
DFN 3x2
Bottom View
Pin 1
ESD Protected
D
D
D
D
G
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±20
-8
-6
-60
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A t ≤ 10s}
Maximum Junction-to-Ambient ^{A D Steady-State}
R_θJA
42
74
Maximum Junction-to-Lead
Steady-State
R_θJL
25
Max
50
90
30
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2009
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