AON4407L Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AON4407L
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON4407L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch.
-RoHS Compliant
-Halogen Free
Features
V_DS (V) = -12V
I_D = -9 A
(V_GS = -4.5V)
R_DS(ON) < 20mΩ (V_GS = -4.5V)
R_DS(ON) < 25mΩ (V_GS = -2.5V)
R_DS(ON) < 31mΩ (V_GS = -1.8V)
ESD Protected!
Top View
DFN 3x2
Bottom View
Pin 1
D
D
Rg
D
D
D
D
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Power Dissipation ^{B TA=25°C}
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-12
±8
-9
-7
-60
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady State
R_θJA
42
74
50
90
Maximum Junction-to-Lead
Steady State RθJL
25
30
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com