AON3816_10 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V N-Channel MOSFET

AON3816
20V N-Channel MOSFET
General Description
Product Summary
The AON3816 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V
V_GS(MAX) rating. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS = 4.5V)
R_DS(ON) (at V_GS = 4V)
R_DS(ON) (at V_GS = 2.5V)
ESD Protected
20V
4A
< 22mΩ
< 23mΩ
< 28mΩ
Top View
DFN 3x3
Bottom View
Top View
S2 ₁
8
G2 ₂
7
S1 _{3 6}
G1 _{4 5}
D2
D2 ^G1
D1
D1
D1
G2
S1
Pin 1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^F
T_C=25°C
T_C=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_C=25°C
Power Dissipation ^F T_C=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±12
4
3.1
40
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
30
Max
50
95
40
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: July 2010
www.aosmd.com
Page 1 of 5