AON3816 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON3816
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AON3816/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by
its common-drain configuration. AON3816 and
AO3816L are electrically identical.
-RoHS Compliant
-AO3816L is Halogen Free
V_DS (V) = 20V
I_D = 4A (V_GS = 4.5V)
R_DS(ON) < 22mΩ (V_GS = 4.5V)
R_DS(ON) < 23mΩ (V_GS = 4V)
R_DS(ON) < 28mΩ (V_GS = 2.5V)
ESD Protected
Top View
DFN 3x3
Bottom View
S2
G2
S1
G1
G1
D2
D2
D1
D1
D1
D2
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
±12
Continuous Drain T_A=25°C
Current ^{A F}
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
4
4
4
4
20
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
2.4
1.4
1.5
0.9
-55 to 150
S2
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady State
Steady State
Symbol
R_θJA
R_θJL
Typ
43
80
33
Max
52
90
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com