AON3814 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON3814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON3814 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V_GS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AON3814 is
Pb-free (meets ROHS & Sony 259 specifications).
Features
V_DS (V) = 20V
I_D = 6A (V_GS = 4.5V)
R_DS(ON) < 17mΩ (V_GS = 4.5V)
R_DS(ON) < 18.5mΩ (V_GS = 4V)
R_DS(ON) < 24mΩ (V_GS = 2.5V)
R_DS(ON) < 39mΩ (V_GS = 1.8V)
ESD Protected
DFN 3x3
D1
Top View
Bottom View
S
D
S
D _G1
G2
S
D
G
D
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±12
Continuous Drain T_A=25°C
6
Current ^F
T_A=70°C
I_D
5.3
Pulsed Drain Current ^B
I_DM
30
T_A=25°C
Power Dissipation ^F T_A=70°C
P_D
2.4
1.5
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
43
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
36
Max
52
90
50
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com