AON3812 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON3812
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON3812 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
V_GS(MAX) rating. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load
switch, facilitated by its common-drain configuration.
Standard Product AON3812 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
V_DS (V) = 30V
I_D = 6A (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 10V)
R_DS(ON) < 30mΩ (V_GS = 4.5V)
R_DS(ON) < 40mΩ (V_GS = 2.5V)
Top View
DFN 3x3
Bottom View
S2
G2
S1
G1
D2 G1
D2
D1
D1
1.6KΩ
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C ^F
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
6
5.3
30
2.2
1.4
-55 to 150
D1
G2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
43
77
Steady-State
R_θJL
35
Max
56
95
50
D2
1.6KΩ
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com