AON3806 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON3806
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON3806 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V_GS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AON3806is Pb-
free (meets ROHS & Sony 259 specifications).
AON3806L is a Green Product ordering option.
AON3806 and AON3806L are electrically identical.
Features
V_DS (V) = 20V
I_D = 7.3 A (V_GS = 10V)
R_DS(ON) < 26mΩ (V_GS = 4.5V)
R_DS(ON) < 27mΩ (V_GS = 4V)
R_DS(ON) < 32mΩ (V_GS = 2.5V)
ESD Rating: 2500V HBM
D1
DFN 3x3
Top View
Bottom View
S2
D2
G2
D2
G1
S1
D1
G1
D1
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
7.3
5.8
30
2.2
1.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
43
77
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
36
Max
56
110
50
D2
G2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.