AON3613 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 30V Complementary MOSFET

AON3613
30V Complementary MOSFET
General Description
The AON3613 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs may be used in inverter and
other applications.
Product Summary
N-channel
V_DS (V) = 30V
I_D = 4.5A
R_DS(ON) < 52mΩ
R_DS(ON) < 60mΩ
P-channel
V_DS (V) = -30V
I_D = -4.5A
R_DS(ON) < 68mΩ
R_DS(ON) < 100mΩ
(V_GS = ±10V)
(V_GS = ±10V)
(V_GS = ±4.5V)
ESD protection
HBM Class 3A
D2
D1
DFN 3x3
Top View
Bottom View
Top View
S2
D2
G2
D2
S1
D1 ^G2
G1
D1
G1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max N-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
4.5
I_D
3.5
I_DM
20
T_A=25°C
Power Dissipation ^B T_A=70°C
2.1
P_D
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
S2
N-channel
S1
P-channel
Max P-channel
-30
±20
-4.5
-3.5
-20
2.1
1.3
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: N-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
50
80
Maximum Junction-to-Lead
Steady-State
R_θJL
30
Thermal Characteristics: P-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
50
80
Maximum Junction-to-Lead
Steady-State
R_θJL
30
Max
Units
60
°C/W
100
°C/W
40
°C/W
Max
Units
60
°C/W
100
°C/W
40
°C/W
Rev 1: Sep. 2012
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