AON3601 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AON3601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AON3601 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be
used in power inverters, and other
applications.Standard Product AON3601 is Pb-
free (meets ROHS & Sony 259 specifications).
AON3601L is a Green Product ordering
option. AON3601 and AON3601L are
electrically identical.
Features
n-channel
V_DS (V) = 30V
I_D = 6.6A (V_GS=10V)
R_DS(ON)
< 29mΩ (V_GS=10V)
< 42mΩ (V_GS=4.5V)
p-channel
-30V
-5A (V_GS = -10V)
R_DS(ON)
< 52mΩ (V_GS = -10V)
< 72mΩ (V_GS = -4.5V)
Top View
DFN 3x3
Bottom View
D2
D1
S2
D2
G2
D2
S1
D1
G2
G1
G1
D1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
6.6
Current ^A
T_A=70°C
I_D
5.6
Pulsed Drain Current ^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.44
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-5
-4.2
-20
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
50
62.5 °C/W
90
110 °C/W
43
53 °C/W
45
62.5 °C/W
80
110 °C/W
40
50 °C/W
Alpha & Omega Semiconductor, Ltd.