AON3406 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON3406
30V N-Channel MOSFET
General Description
The AON3406 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Features
V_DS (V) = 30V
I_D = 10A (V_GS = 10V)
R_DS(ON) < 15mΩ (V_GS = 10V)
R_DS(ON) < 24mΩ (V_GS = 4.5V)
Top View
DFN 3x3
Bottom View
Top View
1
8
2
7
3
6
4
5
G
Pin 1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
10
7.8
30
3.0
1.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
32
65
42
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
25
35
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com