AON2809 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 12V Dual P-Channel MOSFET

AON2809
12V Dual P-Channel MOSFET
General Description
Product Summary
The AON2809 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-2.5V)
R_DS(ON) (at V_GS=-1.8V)
Typical ESD protection
-12V
-2A
< 68mΩ
< 90mΩ
< 118mΩ
HBM Class 2
Top View
DFN 2x2A
Bottom View
D1
G2
S2
D1
Pin 1
D2
S1
G1
D2
Pin 1
D1
G1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-12
±8
-2
-1.6
-8
2.1
1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
50
80
Max
60
100
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0: Nov. 2012
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