AON2803 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V Dual P-Channel MOSFET

AON2803
20V Dual P-Channel MOSFET
General Description
The AON2803 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltage as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
Product Summary
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-4.5V)
R_DS(ON) (at V_GS =-2.5V)
R_DS(ON) (at V_GS =-1.8V)
-20V
-3.8A
< 70mΩ
< 90mΩ
< 115mΩ
DFN 2x2 Package
S1 G1 D2
Pin 1
D1
D2
Pin 1
Top
D1 G2 S2
Bottom
G1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-20
±8
-3.8
-3
-20
1.5
0.95
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
35
65
Maximum Junction-to-Ambient ^B
Maximum Junction-to-Ambient ^B
t ≤ 10s
Steady-State
R_θJA
120
175
Max
45
85
155
235
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Rev 0: August 2012
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