AON2705 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AON2705
30V P-Channel MOSFET
with Schottky Diode
General Description
Product Summary
The AON2705 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. A Schottky
diode is provided to facilitate the implementation of a
bidirectional blocking switch, or for DC-DC conversion
applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS = -4.5V)
Typical ESD protection
V_KA
I_F
V_F (at I_F=1A)
-30V
-3.0A
< 108mΩ
< 165mΩ
HBM Class 3A
20V
2A
<0.45V
DFN 2x2
Top View
Bottom View
K
G
S
K
D
A
NC
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±20
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
-3
I_D
-2.4
I_DM
-16
Schottky reverse voltage
V_KA
Continuous Forward ^TA^=25°C
Current ^A
T_A=70°C
I_F
Pulsed Forward Current ^B
I_FM
T_A=25°C
Power Dissipation ^A T_A=70°C
1.5
P_D
0.95
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter: MOSFET
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
35
65
Parameter: Schottky
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
36
67
D
G
S
Schottky
20
2.5
1.5
15
1.45
0.92
-55 to 150
Max
45
85
47
87
A
K
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Rev0: Aug 2012
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