AON2409 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AON2409
30V P-Channel MOSFET
General Description
Product Summary
The AON2409 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS =-10V)
R_DS(ON) (at V_GS =-4.5V)
-30V
-8A
< 32mΩ
< 53mΩ
Top View
DFN 2x2B
Bottom View
D
D
S
D
S
Pin 1
D
D
G
G
Pin 1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±20
-8
-6.3
-32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
37
66
Max
44
79
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 1 : Nov 2011
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