AON2401 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 8V P-Channel MOSFET

AON2401
8V P-Channel MOSFET
General Description
Product Summary
The AON2401 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-2.5V)
R_DS(ON) (at V_GS =-2.5V)
R_DS(ON) (at V_GS =-1.8V)
R_DS(ON) (at V_GS =-1.5V)
R_DS(ON) (at V_GS =-1.2V)
-8V
-8A
< 22mΩ
< 28mΩ
< 36mΩ
< 53mΩ
Top View
DFN 2x2B
Bottom View
D
D
S
D
S
Pin 1
D
D
G
G
Pin 1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-8
±5
-8
-6
-32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
37
66
Max
45
80
D
S
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
Rev 0 : April. 2012
www.aosmd.com
Page 1 of 5