AON1611 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V P-Channel MOSFET

AON1611
20V P-Channel MOSFET
General Description
Product Summary
The AON1611 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS =-4.5V)
R_DS(ON) (at V_GS =-2.5V)
R_DS(ON) (at V_GS =-1.8V)
R_DS(ON) (at V_GS =-1.5V)
Typical ESD protection
-20V
-4A
< 58mΩ
< 76mΩ
< 98mΩ
< 120mΩ
HBM Class 2
DFN 1.6x1.6A
Top View
Bottom View
S
D
S
G
Pin 1
D
G
Pin 1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
S
Maximum
-20
±8
-4
-3
-16
1.8
1.15
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
56
88
Max
70
110
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : June 2012
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