AON1606 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V N-Channel MOSFET

AON1606
20V N-Channel MOSFET
General Description
Product Summary
The AON1606 utilize advanced trench MOSFET
technology in small DFN 1.0 x 0.6 package. This device is
ideal for load switch applications.
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS =4.5V)
R_DS(ON) (at V_GS =2.5V)
R_DS(ON) (at V_GS =1.8V)
Typical ESD protection
20V
0.7A
< 275mΩ
< 335mΩ
< 390mΩ
HBM Class 1C
DFN 1.0x0.6
Top View
Bottom View
G
S
D
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^E
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±8
0.7
0.55
2.8
0.9
0.55
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
80
110
Maximum Junction-to-Ambient ^B
Maximum Junction-to-Ambient ^B
t ≤ 10s
Steady-State
R_θJA
200
280
Max
100
140
245
340
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Rev 0 : Oct. 2012
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