AOL1704 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1704
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
SRFET ^TM AOL1704 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R_DS(ON),and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications. Standard Product AOL1704 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V_DS (V) = 30V
I_D =50A (V_GS = 10V)
R_DS(ON) < 7.8mΩ (V_GS = 10V)
R_DS(ON) < 9.8mΩ (V_GS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings T _A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C^I
Current ^B
T_C=100°C
I_D
Pulsed Drain Current
I_DM
Continuous Drain T_A=25°C
Current ^H
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
50
43
120
18
14
25
94
50
25
4.3
2.8
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
24
53
29
64
Maximum Junction-to-Case ^C
Steady-State
R_θJC
2.4
3.0
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com