AOL1454_08 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1454
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1454 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
V_DS (V) = 40V
I_D = 50A (V_GS = 10V)
R_DS(ON) < 9mΩ (V_GS = 10V)
R_DS(ON) < 13mΩ (V_GS = 4.5V)
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
D
S
G
D
Bottom tab
connected to
drain
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_C=25°C ^H
50
Current ^B
T_C=100°C
I_D
48
Pulsed Drain Current ^C
I_DM
100
Continuous Drain ^TA^=25°C
12
Current ^A
T_A=70°C
I_DSM
10
Avalanche Current ^C
I_AR
30
Repetitive avalanche energy L=0.3mH ^C
E_AR
135
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
60
30
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2.1
1.3
Junction and Storage Temperature Range T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
20
50
25
60
Maximum Junction-to-Case ^D
Steady-State
R_θJC
1.8
2.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com