AOL1454 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1454
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1454 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
Standard Product AOL1454 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
V_DS (V) = 40V
I_D = 50A (V_GS = 10V)
R_DS(ON) < 9mΩ (V_GS = 10V)
R_DS(ON) < 13mΩ (V_GS = 4.5V)
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^H
Current ^B
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
40
±20
50
48
100
17
13
30
135
60
30
5.0
3.2
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
20
50
25
60
Maximum Junction-to-Case ^D
Steady-State
R_θJC
1.8
2.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com